advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -35v lower on-resistance r ds(on) 8m fast switching characteristic i d -85a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.35 /w rthj-a 62.5 /w data and specifications subject to change without notice continuous drain current (chip) -85 total power dissipation operating junction temperature range total power dissipation 4 storage temperature range continuous drain current, v gs @ 10v -55 pulsed drain current 1 -300 92.6 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v 3 -35 + 20 -75 2 ap4409ageh-hf rating halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 4 201112141 1 -55 to 150 thermal data parameter g d s to-252(h) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -35 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-40a - - 8 m ? v gs =-4.5v, i d =-30a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 70 - s i dss drain-source leakage current v ds =-28v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-30a - 55 88 nc q gs gate-source charge v ds =-28v - 6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 35 - nc t d(on) turn-on delay time v ds =-20v - 12 - ns t r rise time i d =-30a - 56 - ns t d(off) turn-off delay time r g =0.5 -48- ns t f fall time v gs =-10v - 22 - ns c iss input capacitance v gs =0v - 4100 6600 pf c oss output capacitance v ds =-25v - 640 - pf c rss reverse transfer capacitance f=1.0mhz - 530 - pf r g gate resistance f=1.0mhz - 2 4 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-40a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-10a, v gs =0 v , - 26 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is -75a. 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap4409ageh-hf 2
a p4409ageh-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d = -40 a v g =-10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 40 80 120 160 200 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 5 7 9 11 13 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = - 30 a t c =25 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
ap4409ageh-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. transfer characteristics current v.s. case temperature 4 0 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 0 20406080100 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = - 30 a v ds = - 28 v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.0 0.05 0.1 0.2 duty=0. single pulse operation in this area limited by r ds(on) 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) 0 20 40 60 80 100 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j = -40 o c limited by package
|
